Visualizing an adjustable WO3/p-GaN heterojunction

TL;DR

This paper introduces an adjustable heterojunction between WO3 and p-GaN that can be dynamically tuned from a p-n junction to a Schottky contact, with visual feedback and reusability, enabling advanced electronic device functionalities.

Contribution

It presents a novel, controllable WO3/p-GaN heterojunction with visual electrochromic feedback, tunable electronic properties, and reusability, advancing dynamic electronic device design.

Findings

Heterojunction can be tuned from p-n to Schottky contact via hydrogen doping.

The evolution is visually observable due to electrochromic properties.

The heterojunction can be recovered to its original state by annealing.

Abstract

The p-n junctions based on typical semiconductors are the elementary units for the modern electronic devices and chip industry. While the rectification property of those p-n junction is usually fixed once the unit is fabricated. Here, we proposed an adjustable n-WO3/p-GaN heterojunction with controllable electronic properties. For the prepared n-WO3/p-GaN heterojunction, it is almost transparent and shows typical p-n junction rectification. While if gradually doping some hydrogen atoms into WO3 layer by a facile electron-proton synergistic route, the heterojunction can be turned dynamically from the typical p-n junction (n-WO3/p-GaN) to standard Schottky contact (HxWO3/p-GaN) step by step. More importantly, this evolution can be directly visualized by eyesight due to the pronounced electrochromic characteristic of WO3 layer. By connecting two HxWO3/p-GaN heterojunctions, the controllable bi-functional rectification can be achieved. In addition, the HxWO3/p-GaN heterojunction can recovered to the original p-n jucntion just by annealing at ambient, demonstrating the heterojunction is controllable and reusable. The current study will open up tremendous opportunities for dynamic electronic devices in the future.