Polarization Independent Ground State Optical Transitions in Closely Stacked InAs/GaAs Columnar Quantum Dots

TL;DR

This paper demonstrates that by engineering the number of layers in closely stacked InAs/GaAs columnar quantum dots, it is possible to achieve polarization-independent ground state optical transitions at 1550 nm, beneficial for optical device design.

Contribution

The study introduces a method to attain polarization-insensitive optical transitions in stacked quantum dots through multi-million-atom simulations, advancing quantum dot device engineering.

Findings

Nearly zero polarization can be achieved at 1550 nm emission wavelength.

Layer engineering in quantum dots influences polarization dependence.

Results are promising for polarization-insensitive optical devices.

Abstract

This work presents an analysis of the electronic and optical properties of InAs/GaAs columnar quantum dots (QDs) by performing multi-million-atom tight-binding simulations. The plots of the polarisation-dependent ground state optical transition strengths predict that a nearly zero degree of polarisation can be achieved at 1550 nm emission/absorption wavelength by engineering the number of QD layers in a columnar QD. These results are promising for the design of optical devices requiring polarisation insensitive optical response such as semiconductor optical amplifiers.