High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

TL;DR

This paper reports a reproducible method for growing large-area, highly crystalline PtSe2 films via one-zone selenization, achieving epitaxial alignment and high charge carrier mobility suitable for electronic applications.

Contribution

The study introduces a novel one-zone selenization process for epitaxially aligning PtSe2 films, improving structural quality and electrical performance over previous methods.

Findings

Epitaxially aligned PtSe2 films achieved at 600°C.

Charge carrier mobility up to 24 cm²/V·s.

Long-range in-plane ordering observed.

Abstract

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of the growth conditions on the structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for PtSe2 layers grown at elevated temperatures (600 {\deg}C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. Charge carrier mobility determined by Hall-effect measurements is up to 24 cm2/V.s in these films.