Auger Recombination Coefficients in Type-I Mid-Infrared InGaAsSb Quantum Well Lasers
Timothy D. Eales, Igor P. Marko, Alfred R. Adams, Jerry R. Meyer, Igor, Vurgaftman, Stephen J. Sweeney

TL;DR
This study systematically measures and analyzes the wavelength dependence of Auger recombination coefficients in InGaAsSb quantum well lasers emitting in the mid-infrared range, revealing a minimum around 2.1 μm and an exponential increase at longer wavelengths.
Contribution
It provides the first quantitative analysis of Auger coefficients across the 1.7-3.2 μm range in InGaAsSb quantum well lasers, linking experimental data with theoretical models.
Findings
Auger coefficient varies from ≤1x10^{16} to ~8x10^{16} cm^{4}s^{-1}
Minimum Auger rate at ~2.1 μm
Exponential increase in Auger rate beyond 2 μm
Abstract
From a systematic study of the threshold current density as a function of temperature and hydrostatic pressure, in conjunction with theoretical analysis of the gain and threshold carrier density, we have determined the wavelength dependence of the Auger recombination coefficients in InGaAsSb/GaSb quantum well lasers emitting in the 1.7-3.2 m wavelength range. From hydrostatic pressure measurements, the non-radiative component of threshold currents for individual lasers was determined continuously as a function of wavelength. The results are analysed to determine the Auger coefficients quantitatively. This procedure involves calculating the threshold carrier density based on device properties, optical losses, and estimated Auger contribution to the total threshold current density. We observe a minimum in the Auger rate around 2.1 m. A strong increase with decreasing…
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