Controlling local resistance via electric-field induced dislocations
D. M. Evans, D. R. Sm{\aa}br{\aa}ten, T. S. Holstad, P. E. Vullum, A., B. Mosberg, Z. Yan, E. Bourret, A. T. J. Van Helvoort, S. M. Selbach, and D., Meier

TL;DR
This paper demonstrates a novel method to induce and control dislocations in materials using local electric fields, enabling precise manipulation of local properties for future electronic devices.
Contribution
It introduces electric-field induced dislocations as a new approach, bypassing traditional strain-based methods, and explores their effects on material properties.
Findings
Dislocations can be directly imaged in Er(Ti,Mn)O3 using high-resolution techniques.
Electric fields can induce partial dislocations in ferroelectric materials.
Induced dislocations significantly affect local electric transport behavior.
Abstract
Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite…
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Multiferroics and related materials
