Photon-mediated entanglement scheme between a ZnO semiconductor defect and a trapped Yb ion

TL;DR

This paper proposes a photon-mediated entanglement scheme between a ZnO defect and a Yb ion, utilizing optical techniques to overcome emission mismatches, achieving high fidelity and entanglement rates.

Contribution

It introduces a novel optical scheme leveraging cavity-assisted Raman processes and Stark shifts to entangle solid state and trapped ion qubits.

Findings

Entanglement rate of 21 kHz achieved.

Fidelity of 94% demonstrated.

Effective photon overlap of 0.99.

Abstract

We propose an optical scheme to generate an entangled state between a trapped ion and a solid state donor qubit through which-path erasure of identical photons emitted from the two systems. The proposed scheme leverages the similar transition frequencies between In donor bound excitons in ZnO and the $^2P_{1/2}$ to $^2S_{1/2}$ transition in Yb$^+$. The lifetime of the relevant ionic state is longer than that of the ZnO system by a factor of 6, leading to a mismatch in the temporal profiles of emitted photons. A detuned cavity-assisted Raman scheme weakly excites the donor with a shaped laser pulse to generate photons with 0.99 temporal overlap to the Yb$^+$ emission and partially shift the emission of the defect toward the Yb$^+$ transition. The remaining photon shift is accomplished via the dc Stark effect. We show that an entanglement rate of 21 kHz and entanglement fidelity of 94 % can be attained using a weak excitation scheme with reasonable parameters.