Simulation Methodology for Electron Transfer in CMOS Quantum Dots

TL;DR

This paper develops a simulation methodology for modeling electron transfer in CMOS-based quantum dots, combining 3D simulations with differential equations to facilitate quantum computer design.

Contribution

It introduces a novel approach that reduces complex 3D models to differential equations for efficient simulation of electron transport in semiconductor qubits.

Findings

Order reduction from 3D to differential equations demonstrated

Comparison of numerical and semi-analytical techniques conducted

Case studies include electron transfer and Hadamard gate simulation

Abstract

The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid models for the description of the interface between classical circuitry and quantum core hardware. In this study, we model electron transport in semiconductor qubits based on an advanced CMOS technology. Starting from 3D simulations, we demonstrate an order reduction and the steps necessary to obtain ordinary differential equations on probability amplitudes in a multi-particle system. We compare numerical and semi-analytical techniques concluding this paper by examining two case studies: the electron transfer through multiple quantum dots and the construction of a Hadamard gate simulated using a numerical method to solve the time-dependent Schrodinger equation and the tight-binding formalism for a time-dependent Hamiltonian.