Application of quasi-steady state photoconductance technique to lifetime measurements on c-Ge substrates

TL;DR

This paper adapts the quasisteady state photoconductance technique for lifetime measurements on crystalline germanium substrates, addressing specific conditions and validation methods to improve photovoltaic surface passivation understanding.

Contribution

It develops and validates a modified QSS-PC method tailored for c-Ge substrates, including necessary measurement conditions and comparison with microwave photoconductance.

Findings

QSS-PC technique can be adapted for c-Ge with specific measurement conditions.

Effective lifetime measurements are validated against microwave photoconductance.

Accurate lifetime estimation requires precise knowledge of optical and electrical properties.

Abstract

Similar to other high quality crystalline absorbers, an accurate knowledge of surface passivation of crystalline Germanium (c-Ge) substrates is crucial for a straightforward improvement of photovoltaic device performance. For crystalline silicon devices, this information is typically obtained by quasisteady state photoconductance (QSS-PC) technique using Sinton WCT-120 tool. In this work, we explore the conditions to adapt this measurement technique to c-Ge substrates. Based on PC-1D simulations, we deduce that a minimum effective lifetime is needed corresponding to an effective diffusion length equal to the substrate thickness. Apart from this, an accurate estimation of the total photogeneration inside the c-Ge sample is also mandatory. This condition implies that the light intensity that impinges onto the sample must be measured with a c-Ge sensor, although the integrated c-Si sensor can be used for high flash intensities. Additionally, the optical factor used to evaluate sample reflectance must be also known, which is determined by measuring robust effective lifetime values under photoconductance decay conditions. Finally, knowledge about carrier mobility in c-Ge is also necessary to translate the measured photoconductance to the corresponding excess carrier density values. Lifetime measurements of passivated c-Ge substrates done by QSS-PC technique are validated by comparing them with the ones obtained by microwave photoconductance technique.