Quantum Imaging for Semiconductor Industry
Anna V. Paterova, Hongzhi Yang, Zi S. D. Toa, Leonid A. Krivitsky

TL;DR
This paper introduces a quantum imaging technique for semiconductor quality control that probes samples with IR light while detecting in the visible range, enabling effective IR imaging despite limited IR detector options.
Contribution
The work demonstrates IR quantum imaging of silicon chips with shifted detection wavelengths, offering a novel approach to IR imaging in semiconductor inspection.
Findings
Successful IR quantum imaging at 1550 nm with detection at 810 nm
Analysis of measurement conditions for quality control
Estimated time for sample inspection using the technique
Abstract
Infrared (IR) imaging is one of the significant tools for the quality control measurements of fabricated samples. Standard IR imaging techniques use direct measurements, where light sources and detectors operate at IR range. Due to the limited choices of IR light sources or detectors, challenges in reaching specific IR wavelengths may arise. In our work, we perform indirect IR microscopy based on the quantum imaging technique. This method allows us to probe the sample with IR light, while the detection is shifted into the visible or near-IR range. Thus, we demonstrate IR quantum imaging of the silicon chips at different magnifications, wherein a sample is probed at 1550 nm wavelength, but the detection is performed at 810 nm. We also analyze the possible measurement conditions of the technique and estimate the time needed to perform quality control checks of samples.
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