Radiation effects on NDL prototype LGAD sensors after proton irradiation

TL;DR

This study investigates how proton irradiation affects NDL prototype LGAD sensors, revealing that their radiation resistance remains good due to the acceptor removal mechanism reducing doping concentration with increased fluence.

Contribution

First detailed analysis of radiation effects on NDL LGAD sensors using proton irradiation, quantifying acceptor removal and demonstrating their radiation resistance.

Findings

Doping concentration decreases with irradiation fluence

Acceptor removal coefficient c_A = (6.07 ± 0.70)×10^{-16} cm^2

NDL sensors show good radiation resistance

Abstract

We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$\times10^{14}$ $n_{eq}/cm^2$ up to 4.5$\times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07\pm0.70)\times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.