Enhanced Electromechanical Response in Defective Sm and Nd Co-doped Ceria

TL;DR

This paper demonstrates enhanced electromechanical response in co-doped ceria with low vacancy-dopant association energy, revealing the influence of local oxygen vacancy environment and microstructural factors on electrostriction.

Contribution

It introduces a co-doping strategy in ceria to improve electrostrictive properties by manipulating vacancy-dopant interactions and microstructure effects.

Findings

Higher electrostrictive strain coefficient at lower frequencies.

Observation of electromechanical strain saturation and relaxation.

Electrostriction strongly influenced by oxygen vacancy environment.

Abstract

Highly oxygen defective cerium oxide, e.g. Gd-doped ceria is a sustainable non-classical electrostrictor with electromechanical properties that are superior to lead-based piezoelectric metal oxides. Here, we report electrostriction in co-doped ceria (Sm, Nd) with a nominally low short-range vacancy-dopant association energy. Such a strategy results in a higher electrostrictive strain coefficient at lower-frequencies, and unexpected electromechanical strain saturation and relaxation effects. These outcomes support the hypothesis that electrostriction is strongly influenced by the local environment of oxygen vacancy and by the ionic migration blocking factors built-in the microstructure.