Silicon carbide-assisted co-existence of magnetic phases in well-optimized Ti$_3$SiC$_2$-etched MXene

TL;DR

This study demonstrates the successful exfoliation of Ti3C2T_x MXene from Ti3SiC2 MAX, revealing co-existing magnetic phases, which could be promising for future spintronics applications.

Contribution

First successful exfoliation of Ti3C2T_x MXene from Ti3SiC2 MAX, showing co-existing ferromagnetic and diamagnetic phases in 2D MXene material.

Findings

Successful exfoliation confirmed by XRD and SEM.

Presence of ferromagnetic and diamagnetic phases at room temperature.

Potential application in spintronics devices.

Abstract

Here, we report the first successful exfoliation of two-dimensional Ti$_3$C$_2$T$_x$ MXene through selective etching of silicon from titanium silicon carbide (Ti$_3$SiC$_2$) MAX. The successful etching and exfoliation of MXene is confirmed through the shifting of all (00l) peaks to lower angles along with the increase in c-lattice parameter as determined by X-ray diffraction technique to detail the material structure. The c-lattice parameter of multilayered MXene was found to be 19.34{\AA} which was increased to 26.22 {\AA} after delamination process indicating the successful intercalation of TMA+ ions within the MXene Sheets. The scanning electron microscopy (SEM) images show the formation of 2D layered structure. The magnetic measurement of the etched MXene sample was measured using superconducting quantum interference device (SQUID: Quantum Design). The magnetization vs magnetic (M-H) curves clearly indicate the ferromagnetic-dominant hysteresis loops at low-temperature as well as at room-temperature along with the presence of small diamagnetic phase due to the presence of silicon carbide (SiC) present in MXene structure. The presence of SiC phase is confirmed through XRD and Raman spectra that show the sharp peaks and vibrational modes of SiC within 2D MXene structure. The present work shows the co-existence of ferromagnetic and diamagnetic phases making it suitable 2D material for future spintronics devices.