Cavity Quantum Electrodynamics with Second-Order Topological Corner State
Xin Xie, Weixuan Zhang, Xiaowu He, Shiyao Wu, Jianchen Dang, Kai Peng,, Feilong Song, Longlong Yang, Haiqiao Ni, Zhichuan Niu, Can Wang, Kuijuan Jin,, Xiangdong Zhang, Xiulai Xu

TL;DR
This paper demonstrates the coupling of quantum dots with second-order topological corner states in photonic crystal cavities, showing enhanced emission and robustness, advancing topological quantum photonics.
Contribution
It introduces a novel integration of quantum dots with second-order topological corner states in photonic crystals, enabling robust cavity QED applications.
Findings
High-Q corner state observed with quality factor near 2000
Enhanced photoluminescence when quantum dots are on resonance
Potential for topological quantum information processing
Abstract
Topological photonics provides a new paradigm in studying cavity quantum electrodynamics with robustness to disorder. In this work, we demonstrate the coupling between single quantum dots and the second-order topological corner state. Based on the second-order topological corner state, a topological photonic crystal cavity is designed and fabricated into GaAs slabs with quantum dots embedded. The coexistence of corner state and edge state with high quality factor close to 2000 is observed. The enhancement of photoluminescence intensity and emission rate are both observed when the quantum dot is on resonance with the corner state. This result enables the application of topology into cavity quantum electrodynamics, offering an approach to topological devices for quantum information processing.
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