Mid-infrared photoconductivity spectra of single tellurium nanowires]{Mid-infrared photoconductivity spectra of single tellurium nanowires

TL;DR

This study investigates the mid-infrared photoconductivity spectra of single tellurium nanowires, revealing their potential for optoelectronic applications due to their anisotropic properties and tunable photoresponse.

Contribution

It presents the fabrication of tellurium nanowire devices and analyzes their polarization-resolved photoconductivity spectra under mid-infrared light, highlighting the effects of temperature and voltage bias.

Findings

Photoresponse intensity depends on temperature.

Positive voltage bias enhances photoresponse.

Anisotropic interaction of charge carriers observed.

Abstract

Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and investigated the radiative interaction of charge carriers by the polarization-resolved photoconductivity spectra under mid-infrared illumination. The intensity of the photoresponse shows sensitive dependence on temperature and could be significantly boosted by positive voltage bias from the back gate.