Ideal memristor based on viscous magnetization dynamics driven by spin torque

TL;DR

This paper proposes a new type of ideal memristor based on viscous magnetization dynamics driven by spin torque, which can be realized in spin liquid states of thin-film heterostructures and offers tunable, nonvolatile, and neuromorphic functionalities.

Contribution

It introduces a novel physical mechanism for ideal memristors using spin torque-driven viscous magnetization dynamics in frustrated magnetic systems.

Findings

Memristive response is tunable near the glass transition.

Current-induced Joule heating enables nonvolatile operation.

Ideal memristive behaviors can occur in various viscous dynamic systems.

Abstract

We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid state of thin-film heterostructures with frustrated exchange, where memristive response is tunable by proximity to the glass transition, while current-induced Joule heating facilitates nonvolatile operation and second-order memristive functionality beneficial for neuromorphic applications. Ideal memristive behaviors can be achieved in other systems characterized by viscous dynamics of physical, electronic, or magnetic degrees of freedom.