Probing Emergent Surface and Interfacial Properties in Complex Oxides via in situ X-ray Photoelectron Spectroscopy
Suresh Thapa, Rajendra Paudel, Miles D. Blanchet, Patrick T., Gemperline, Ryan B. Comes

TL;DR
This paper reviews recent advances in understanding complex oxide interfaces using in situ X-ray photoelectron spectroscopy, highlighting how integrated synthesis and spectroscopy techniques reveal interfacial phenomena crucial for electronic applications.
Contribution
It connects recent research findings to in situ X-ray photoelectron spectroscopy studies, emphasizing the integration of synthesis and characterization for interface analysis.
Findings
In situ spectroscopy improves understanding of interfacial intermixing.
Synchrotron techniques reveal charge transfer phenomena.
Integrated methods enable tailored heterostructure design.
Abstract
Emergent behavior at complex oxide interfaces has driven much of the research in the oxide thin film community for the past twenty years. Interfaces have been engineered for potential applications in spintronics, topological quantum computing, and high-speed electronics in cases where the bulk materials would not exhibit the desired properties. Advances in thin film growth have made the synthesis of these interfaces possible, while surface characterization tools such as X-ray photoelectron spectroscopy have been critical to understanding surface and interfacial phenomena in these materials. In this review we discuss the leading research in the oxide field over the past 5-10 years with a focus on connecting the key results to the X-ray photoelectron spectroscopy studies that enabled them. We describe how in situ integration of synthesis and spectroscopy can be used to improve the film…
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