Characterization of Hamamatsu 14160 series of Silicon Photo-Multipliers

TL;DR

This paper provides a detailed characterization of the Hamamatsu S14160 series Silicon Photo-Multipliers, focusing on their electrical and optical performance metrics and how these vary with temperature, highlighting their suitability for advanced detection applications.

Contribution

It presents the first comprehensive analysis of the S14160 series SiPMs, including breakdown voltage, pulse shape, dark current, and gain, with a focus on temperature dependence.

Findings

Breakdown voltage varies with temperature.

Pulse shape and dark current are characterized across conditions.

Gain stability is analyzed as a function of temperature.

Abstract

Silicon Photo-Multipliers (SiPMs) are semiconductor-based photo-detectors with performances similar to the traditional Photo-Multiplier Tubes (PMTs). An increasing number of experiments dedicated to particle detection in colliders, accelerators, astrophysics, neutrino and rare-event physics involving scintillators are using SiPMs as photodetectors. They are gradually substituting PMTs in many applications, especially where low voltages are required and high magnetic field is present. Hamamatsu Photonics K.K., one of leading producers of photo-detectors, in the last year introduced the S14160 series of SiPMs with improved performances. In this work, a characterization of these devices will be presented in terms of breakdown voltages, pulse shape, dark current and gain. Particular attention has been dedicated to the analysis of the parameters as function of temperature.