Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

TL;DR

This paper reports the development and testing of a neutron imaging sensor using INTPIX4-SOI silicon devices, demonstrating its detection efficiency and spatial resolution capabilities for neutron imaging applications.

Contribution

It introduces a novel neutron imaging sensor based on INTPIX4-SOI technology and evaluates its performance through irradiation tests at multiple facilities.

Findings

Detection efficiency of ~1.5% for thermal neutrons

Spatial resolution upper bound of 4.1 ± 0.2 μm

Sensor response characterized across various neutron sources

Abstract

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$\% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 ~\mu$m in terms of a standard deviation of the line spread function.