Role of Dirac nodal lines and strain on the high spin Hall conductivity of epitaxial IrO2 thin films

TL;DR

This study demonstrates that Dirac nodal lines in IrO2 thin films significantly enhance spin Hall conductivity, with strain disrupting these lines and reducing the effect, highlighting the potential for high-efficiency spin current generation.

Contribution

It provides experimental evidence linking Dirac nodal lines in IrO2 to high spin Hall conductivity and shows how strain can modulate this effect.

Findings

(001) films exhibit high spin Hall conductivity, up to 0.65 at 30 K

Strain in (110) films reduces spin Hall conductivity by disrupting Dirac nodal lines

IrO2's large SHC at room temperature is promising for spintronic applications

Abstract

Since the discovery of a 'giant' spin Hall effect (SHE) in certain heavy metal elements there has been an intense effort to identify and develop new and technologically viable, heavy-metal-based thin film materials that could generate spin currents with even greater efficiency to exert spin-orbit torques (SOT) on adjacent ferromagnetic nanostructures. In parallel, there have been wide ranging fundamental studies of the spin currents that can arise from robust, intrinsic spin-orbit interaction (SOI) effects in more exotic systems including topological insulators, transition metal dichalcogenides with broken crystalline symmetry, Weyl and Dirac semimetals where gapless electronic excitations are protected by topology and symmetry. Here we experimentally study strong SOT from the topological semimetal IrO2 in (001) and (110) normal films, which exhibit distinctly different SHE strengths. Angle resolved photoemission spectroscopy studies have shown IrO2 exhibits Dirac nodal lines (DNL) in the band structure, which could enable a very high spin Hall conductivity (SHC). The (001) films exhibit exceptionally high damping like torque efficiency ranging from 0.45 at 293 K to 0.65 at 30 K which sets the lower bound of SHC that is ten times higher and of opposite sign than the theoretical prediction. We observe a substantial reduction of SHC in anisotropically strained (110) films, which suggests that the DNLs that are present in the (001) films and contribute to SHC, are disrupted and gapped due to the large anisotropic strain in (110) films, which in turn significantly lowers SHC. Very large value of SHC at room temperature of this Dirac semimetal could be very promising for the practical application.