All-Linear Multistate Magnetic Switching Induced by Electrical Current
Meiyin Yang, Yanru Li, Jun Luo, Yongcheng Deng, Nan Zhang, Yan Cui,, Peiyue Yu, Tengzhi Yang, Yu Sheng, Sumei Wang, Jing Xu, Chao Zhao, Kaiyou, Wang

TL;DR
This paper introduces a new electrical current-based method for controlling domain wall motion and magnetic switching in multilayer devices, enabling linear, hysteresis-free, and multistate magnetic control.
Contribution
It presents an alternative mechanism for magnetic switching controlled by current amplitude and D/A ratio, demonstrating linear, hysteresis-free, and multistate switching in multilayer structures.
Findings
Linear magnetic switching without hysteresis achieved.
Current-induced Neel wall motion demonstrated.
Field-free, chirally controllable multistate switching observed.
Abstract
We present an alternative mechanism to control the domain wall motion, whose directions are manipulated by the amplitude of electrical currents when modulating the ratio of D/A (constants of Dzyaloshinskii-Moriya interaction over exchange interaction). To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting the D/A of Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed area, which is due to the current induced Neel wall motion and a strong exchange coupling at this interface.
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