Accuracy of Y-function methods for parameters extraction of two-dimensional FETs across different technologies

TL;DR

This paper evaluates the accuracy of Y-function methods for extracting contact resistance in 2D FETs, emphasizing the importance of considering intrinsic mobility degradation for reliable parameter estimation across various technologies.

Contribution

It introduces a Y-function-based method that accounts for mobility degradation, providing more accurate contact resistance values for 2D FETs than traditional approaches.

Findings

Y-function method considering mobility degradation aligns with reference values.

Intrinsic mobility degradation significantly impacts device performance.

First experimental characterization of mobility degradation in 2D transistors.

Abstract

The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a \textit{Y}-function-based method considering a more complete transport model yields contact resistance values similar to reference values obtained by other intricate approaches. The latter values are more suitable also to describe experimental data of two dimensional devices of different technologies. The intrinsic mobility degradation factor of two-dimensional transistors is experimentally characterized for the first time and its impact on the device performance is described and evaluated.