Energy levels in a single-electron quantum dot with hydrostatic pressure

TL;DR

This paper investigates how hydrostatic pressure influences the energy levels of a single-electron quantum dot, proposing a method to control quantum gates via pressure-induced effects.

Contribution

It introduces a model combining infinite potential well and harmonic oscillator to analyze pressure effects and proposes a pressure-controlled quantum NOT gate scheme.

Findings

Hydrostatic pressure alters quantum dot energy levels.

A theoretical framework for pressure-controlled quantum gates is developed.

Potential for pressure-based quantum computing control.

Abstract

In this article we present a study of the effects of hydrostatic pressure on the energy levels of a quantum dot with an electron. A quantum dot is modeled using an infinite potential well and a two-dimensional harmonic oscillator and solved through the formalism of second quantization. A scheme for the implementation of a quantum NOT gate controlled with hydrostatic pressure is proposed.