Current modulation in graphene p-n junctions with external fields

TL;DR

This paper proposes a graphene p-n junction device that modulates current using external fields, functioning as a Veselago lens to focus electrons, with potential applications in low power transistors.

Contribution

It introduces a novel graphene-based nanostructure that modulates electron flow without requiring a bandgap, utilizing external fields to control electron focusing.

Findings

External electric and magnetic fields shift the electron focus in the device.

The device can modulate transmission without a bandgap in graphene.

Potential application in low power field effect transistors.

Abstract

In this work we describe a proposal for a graphene-based nanostructure that modulates electric current even in the absence of a gap in the band structure. The device consists of a graphene p-n junction that acts as a Veselago lens that focuses ballistic electrons on the output lead. Applying external (electric and magnetic) fields changes the position of the output focus, reducing the transmission. Such device can be applied to low power field effect transistors, which can benefit from graphene's high electronic mobility.