Hidden Silicon-Vacancy Centers in Diamond
Christopher L. Smallwood, Ronald Ulbricht, Matthew W. Day, Tim, Schr\"oder, Kelsey M. Bates, Travis M. Autry, Geoffrey Diederich, Edward, Bielejec, Mark E. Siemens, and Steven T. Cundiff
TL;DR
This paper reveals a hidden population of silicon-vacancy centers in diamond with extended coherence times, identified through advanced spectroscopy, and discusses strain as a control mechanism for quantum device applications.
Contribution
It introduces a novel spectroscopic method to detect hidden SiV- centers and explores strain effects on their coherence properties.
Findings
Discovery of a hidden SiV- population not seen in photoluminescence
Identification of spectral inhomogeneity among SiV- centers
Extended electronic T2 times observed in the hidden population
Abstract
We characterize a high-density sample of negatively charged silicon-vacancy (SiV) centers in diamond using collinear optical multidimensional coherent spectroscopy. By comparing the results of complementary signal detection schemes, we identify a hidden population of \ce{SiV^-} centers that is not typically observed in photoluminescence, and which exhibits significant spectral inhomogeneity and extended electronic times. The phenomenon is likely caused by strain, indicating a potential mechanism for controlling electric coherence in color-center-based quantum devices.
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