Giant voltage control of spin Hall nano-oscillator damping

TL;DR

This paper demonstrates voltage-controlled tuning of damping in spin Hall nano-oscillators using an electric field effect on magnetic anisotropy, enabling energy-efficient individual oscillator control for neuromorphic computing.

Contribution

It introduces electrically gated nano-constrictions that significantly modify damping and threshold current in SHNOs, enhancing control in large arrays.

Findings

42% variation in effective damping over four volts

Giant voltage-dependent tuning of threshold current

Potential for energy-efficient control in neuromorphic systems

Abstract

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive for individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy, tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42 % variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing.