Transport properties of a GaAs/InGaAs/GaAs quantum well: temperature, magnetic field and many-body effects

TL;DR

This study explores how temperature, magnetic fields, and many-body interactions influence electron transport in a GaAs/InGaAs/GaAs quantum well, highlighting the roles of scattering mechanisms and quantum well parameters.

Contribution

It provides a comprehensive analysis of transport properties considering many-body effects and various scattering mechanisms in a specific quantum well structure.

Findings

Transport properties are significantly affected by temperature and magnetic field.

Quantum well width and carrier density influence resistance and mobility.

Many-body effects alter scattering and transport behavior.

Abstract

We investigate the zero and finite temperature transport properties of a quasi-two-dimensional electron gas in a GaAs/InGaAs/GaAs quantum well under a magnetic field, taking into account many-body effects via a local-field correction. We consider the surface roughness, roughness-induced piezoelectric, remote charged impurity and homogeneous background charged impurity scattering. The effects of the quantum well width, carrier density, temperature and local-field correction on resistance ratio are investigated. We also consider the dependence of the total mobility on the multiple scattering effect.