Massive suppression of proximity pairing in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium
Joseph A. Hlevyack, Sahand Najafzadeh, Meng-Kai Lin, Takahiro, Hashimoto, Tsubaki Nagashima, Akihiro Tsuzuki, Akiko Fukushima, C\'edric, Bareille, Yang Bai, Peng Chen, Ro-Ya Liu, Yao Li, David Fl\"ototto, Jos\'e, Avila, James N. Eckstein, Shik Shin, Kozo Okazaki, and T.-C. Chiang

TL;DR
This study reveals a significant suppression of proximity-induced superconductivity in topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on niobium, highlighting challenges in achieving topological superconductivity in nearly intrinsic topological insulators.
Contribution
The paper demonstrates that bulk insulating topological (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films exhibit a massive suppression of proximity pairing when interfaced with niobium, contrasting with previous findings in doped systems.
Findings
Giant attenuation of surface superconductivity in (Bi$_{1-x}$Sb$_{x})_2$Te$_3$ films on Nb
Quantified superconducting gaps show significant suppression compared to doped Bi$_2$Se$_3$/Nb
Limitations identified for realizing topological superconductivity in intrinsic systems
Abstract
Interfacing bulk conducting topological BiSe films with s-wave superconductors initiates strong superconducting order in the nontrivial surface states. However, bulk insulating topological (BiSbTe films on bulk Nb instead exhibit a giant attenuation of surface superconductivity, even for films only two-layers thick. This massive suppression of proximity pairing is evidenced by ultrahigh-resolution band mappings and by contrasting quantified superconducting gaps with those of heavily n-doped topological BiSe/Nb. The results underscore the limitations of using superconducting proximity effects to realize topological superconductivity in nearly intrinsic systems.
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