Dielectric Screening by 2D Substrates
Keian Noori, Nicholas Lin Quan Cheng, Fengyuan Xuan, Su Ying Quek

TL;DR
This paper uses first principles calculations to study how 2D substrates like BN, graphene, and MoS2 intrinsically screen charge perturbations, affecting electronic properties and charge fluctuations, with implications for nanoscale device design.
Contribution
It provides a first-principles analysis of the intrinsic non-local dielectric screening properties of 2D materials and their impact on charge fluctuations and molecular electronic gaps.
Findings
Qualitative agreement with electrostatic force microscopy experiments.
Intrinsic thickness-dependent screening effects in 2D materials.
Proposed quick method to predict HOMO-LUMO gaps on substrates.
Abstract
Two-dimensional (2D) materials are increasingly being used as active components in nanoscale devices. Many interesting properties of 2D materials stem from the reduced and highly non-local electronic screening in two dimensions. While electronic screening within 2D materials has been studied extensively, the question still remains of how 2D substrates screen charge perturbations or electronic excitations adjacent to them. Thickness-dependent dielectric screening properties have recently been studied using electrostatic force microscopy (EFM) experiments. However, it was suggested that some of the thickness-dependent trends were due to extrinsic effects. Similarly, Kelvin probe measurements (KPM) indicate that charge fluctuations are reduced when BN slabs are placed on SiO, but it is unclear if this effect is due to intrinsic screening from BN. In this work, we use first principles…
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