Contact resistance extraction of graphene FET technologies based on individual device characterization

TL;DR

This paper presents practical methods for extracting contact resistance in graphene FETs using standard device measurements, avoiding complex test structures, and validates these methods through simulations and experiments.

Contribution

It introduces simplified, adaptable contact resistance extraction techniques for graphene FETs that do not require dedicated test structures or internal device analysis.

Findings

Extraction methods closely match more complex techniques.

Bias-dependent resistance studies are improved.

Methods are validated with both simulation and experimental data.

Abstract

Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test structures or internal device phenomena characterization. The methodologies are evaluated with simulation-based data and applied to fabricated devices. The extracted values are close to the ones obtained with other more intricate methodologies. Bias-dependent contact and channel resistances studies, bias-dependent high-frequency performance studies and contact engineering studies are enhanced and evaluated by the extracted contact resistance values.