Nanosecond dynamics in intrinsic topological insulator $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ revealed by time-resolved optical reflectivity

TL;DR

This study uses ultrafast optical reflectivity to reveal nanosecond-scale carrier dynamics in topological insulator $ ext{Bi}_{2-x} ext{Sb}_x ext{Se}_3$, showing significantly slowed bulk carrier relaxation in insulating samples compared to metallic ones.

Contribution

It demonstrates the long-lived bimolecular recombination dynamics in $ ext{Bi}_{2-x} ext{Sb}_x ext{Se}_3$ nanoplatelets, highlighting the impact of doping on carrier relaxation.

Findings

Bulk carrier relaxation time approaches 3.3 ns at low fluence.

Long-lived decay linked to bimolecular recombination.

Slower relaxation in insulating compared to metallic samples.

Abstract

$\text{Bi}_2\text{Se}_3$ is an ideal three-dimensional topological insulator in which the chemical potential can be brought into the bulk band gap with antimony doping. Here, we utilize ultrafast time-resolved transient reflectivity to characterize the photoexcited carrier decay in $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets. We report a substantial slowing of the bulk carrier relaxation time in bulk-insulating $\text{Bi}_{2-x}\text{Sb}_x\text{Se}_3$ nanoplatelets as compared to $n$-type bulk-metallic $\text{Bi}_2\text{Se}_3$ at low temperatures, which approaches $3.3 \text{ ns}$ in the zero pump fluence limit. This long-lived decay is correlated across different fluences and antimony concentrations, revealing unique decay dynamics not present in $n$-type $\text{Bi}_2\text{Se}_3$, namely the slow bimolecular recombination of bulk carriers.