Interfacial charge transfer and gate induced hysteresis in monochalcogenide InSe/GaSe heterostructures

TL;DR

This study investigates charge transfer and hysteresis effects in InSe/GaSe heterostructures, revealing gate-dependent conductance decay and dynamic charge transfer phenomena in 2D van der Waals materials.

Contribution

It demonstrates the gate-induced hysteresis and charge transfer mechanisms in InSe/GaSe heterostructures, providing insights into their electronic behavior for device applications.

Findings

Charge transfer occurs between InSe and GaSe layers.

Strong hysteresis observed in electron transport.

Gate voltage influences conductance decay rate.

Abstract

Heterostructures of 2D van der Waals semiconductor materials offer a diverse playground for exploring fundamental physics and potential device applications. In InSe/GaSe heterostructures formed by sequential mechanical exfoliation and stacking of 2D monochalcogenides InSe and GaSe, we observe charge transfer between InSe and GaSe due to the 2D van der Waals interface formation and a strong hysteresis effect in the electron transport through the InSe layer when a gate voltage is applied through the GaSe layer. A gate voltage dependant conductance decay rate is also observed. We relate these observations to the gate voltage dependant dynamical charge transfer between InSe and GaSe layers.