Oxygen vacancy induced electronic structure modification of KTaO$_3$
Shashank Kumar Ojha, Sanat Kumar Gogoi, Prithwijit Mandal, S. D., Kaushik, J. W. Freeland, M. Jain, and S. Middey

TL;DR
This study investigates how oxygen vacancies induce metallicity in KTaO$_3$, revealing localized mid-gap states and electron doping effects through ab initio calculations and experimental measurements, highlighting the importance of oxygen vacancies in 2-DEG systems.
Contribution
The paper demonstrates that oxygen vacancies alone can induce metallic behavior in KTaO$_3$, supported by combined theoretical and experimental evidence, clarifying the role of oxygen vacancies in 2-DEG formation.
Findings
Oxygen vacancies create partially filled conduction bands in KTaO$_3$
Localized mid-gap states are associated with oxygen clustering around Ta
Experimental evidence confirms electron doping and mid-gap states
Abstract
The observation of metallic interface between band insulators LaAlO and SrTiO has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases (2-DEG). However, the understanding of the origin of the 2-DEG is very often hindered as several possible mechanisms such as polar catastrophe, cationic intermixing and oxygen vacancy (OV) etc. can be operative simultaneously. The presence of a heavy element makes KTaO (KTO) based 2-DEG a potential platform to investigate spin orbit coupling driven novel electronic and magnetic phenomena. In this work, we investigate the sole effect of the OV, which makes KTO metallic. Our detailed \textit{ab initio} calculations not only find partially filled conduction bands in the presence of an OV but also predict a highly localized mid-gap state due to the…
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