Flat and safe under the graphene sheet

TL;DR

This paper discusses the stabilization of large-scale atomically thin metals via confinement epitaxy at the graphene/SiC interface, highlighting their unique bonding and stability for advanced quantum and optoelectronic applications.

Contribution

It introduces a method to stabilize large-scale atomically thin metals using confinement epitaxy at the graphene/SiC interface, enabling new technological possibilities.

Findings

Large-scale atomically thin metals can be stabilized by confinement epitaxy.

Graphene/SiC interface exhibits gradient bonding type.

These materials are air stable and suitable for quantum and optoelectronic technologies.

Abstract

Large-scale atomically thin metals can be stabilized through confinement epitaxy at graphene / SiC interface, which exhibit a gradient bonding type and are air stable, providing a compelling platform for quantum and optoelectronic technologies.