Structural, Electronic, and Magnetic Properties of HiPIMS Grown Co-N Thin Films

TL;DR

This study compares the structural, electronic, and magnetic properties of Co-N thin films grown by dcMS and HiPIMS, revealing that HiPIMS enhances crystallinity and influences magnetic anisotropy through different growth mechanisms.

Contribution

It provides new insights into how HiPIMS growth conditions affect the phase stabilization, crystallinity, and magnetic anisotropy of Co-N thin films compared to traditional dcMS methods.

Findings

HiPIMS-grown films have (111) orientation, unlike dcMS films.

HiPIMS improves crystallite size and surface uniformity.

Magnetic anisotropy varies despite similar saturation magnetization.

Abstract

We studied the growth behavior, structural, electronic, and magnetic properties of cobalt nitride (Co-N) thin films deposited using direct current (dc) and high power impulse magnetron sputtering (HiPIMS) processes. The N$_2$ partial gas flow (\pn) was varied in close intervals to achieve the optimum conditions for the growth of tetra cobalt nitride (\tcn) phase. We found that Co-N films grown using HiPIMS process adopt (111) orientation as compared to the growth taking place along the (100) direction in the dcMS process. It was observed that HiPIMS grown Co-N~films were superior in terms of crystallite size and uniform surface morphology. The local structure of films was investigated using x-ray absorption fine structure (XAFS) measurements. We found that the high energy of adatoms in the HiPIMS technique assisted in the greater stabilization of fcc-Co and novel \tcn~phase relative to the dcMS process. Magnetic properties of Co-N thin films were studied using magneto-optical Kerr effect, vibrating sample magnetometry and polarized neutron reflectivity. It was found that though the saturation magnetization remains almost similar in films grown by dcMS or HiPIMS processes, they differ in terms of their magnetic anisotropy. Such variation can be understood in terms of differences in the growth mechanisms in dcMS and HiPIMS processes affecting the local structure of resulting \tcn~phase.