Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride

TL;DR

This study investigates how grain orientation in hexagonal boron nitride affects the growth and properties of quantum emitters, demonstrating improved emission and integration with optical devices for quantum technologies.

Contribution

It reveals that quantum emitters in hBN are limited to (001) nickel grains and enhances their emission properties through integration with optical antennas.

Findings

Emitters are confined to (001) nickel grains.

Enhanced brightness and stability of emitters.

Achieved high photon purity and collection efficiency.

Abstract

Point defects in hexagonal boron nitride have emerged as a promising quantum light source due to their bright and photostable room temperature emission. In this work, we study the incorporation of quantum emitters during chemical vapor deposition growth on a nickel substrate. Combining a range of characterization techniques, we demonstrate that the incorporation of quantum emitters is limited to (001) oriented nickel grains. Such emitters display improved emission properties in terms of brightness and stability. We further utilize these emitters and integrate them with a compact optical antenna enhancing light collection from the sources. The hybrid device yields average saturation count rates of ~2.9 x106 cps and an average photon purity of ~90%. Our results advance the controlled generation of spatially distributed quantum emitters in hBN and demonstrate a key step towards on-chip devices with maximum collection efficiency.