Study of Silicon Photomultiplier Performance at Different Temperatures
N. Anfimov, D. Fedoseev, A. Rybnikov, A. Selyunin, S. Sokolov, A., Sotnikov

TL;DR
This study investigates how the performance of Silicon Photomultipliers varies across a wide temperature range, focusing on dark noise reduction at low temperatures, with specific attention to the Photon Detection Efficiency near -50°C.
Contribution
The paper provides a comparative analysis of two SiPM samples over broad temperatures, showing no significant PDE variation, which informs low-temperature applications.
Findings
Dark noise decreases at lower temperatures.
No significant PDE change observed around -50°C.
Performance consistency across different SiPM brands.
Abstract
Decreasing the operation temperature of a Silicon Photo-Multiplier (SiPM) leads to a drop in its dark noise. Some experiments consider cold temperatures as an option for low noise applications of SiPM. One of those is the TAO detector, which requires operation at C. A significant dependence of the Photon Detection Efficiency (PDE) of a SiPM on different temperatures was reported with a drastic drop around this temperature. In this paper, we present studies of performance for two samples of SiPMs from Hamamatsu and AdvanSID(FBK) companies in a broad temperature range. No significant difference for the PDE was observed.
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