Fractional quantum Hall effect in CVD-grown graphene

TL;DR

This study demonstrates the observation of fractional quantum Hall states in CVD-grown graphene, showing high quantum mobility and energy gaps comparable to exfoliated graphene, across a wide range of magnetic fields.

Contribution

First observation of fractional quantum Hall states in CVD-grown graphene with mobility and energy gaps similar to exfoliated graphene.

Findings

Fractional quantum Hall states observed in CVD graphene.

Quantum mobility comparable to exfoliated graphene.

Energy gaps up to 30 K for fractional states.

Abstract

We show the emergence of fractional quantum Hall states in dry-transferred chemical vapor deposition (CVD) derived graphene assembled into heterostructures for magnetic fields from below 3 T to 35 T. Effective composite-fermion filling factors up to $\nu^* = 4$ are visible and higher order composite-fermion states (with four flux quanta attached) start to emerge at the highest fields. Our results show that the quantum mobility of CVD-grown graphene is comparable to that of exfoliated graphene and, more specifically, that the $p/3$ fractional quantum Hall states have energy gaps of up to 30 K, well comparable to those observed in other silicon-gated devices based on exfoliated graphene.