Effects of filling, strain, and electric field on the N\'{e}el vector in antiferromagnetic CrSb
In Jun Park, Sohee Kwon, and Roger K. Lake

TL;DR
This study uses density functional theory to explore how strain, electric fields, and band filling influence the magnetic anisotropy and Néel vector in bulk and thin-film CrSb, revealing mechanisms for magnetic control in antiferromagnetic spintronics.
Contribution
It provides a detailed analysis of how strain, electric field, and band filling affect the magnetic anisotropy energy and NéeL vector in CrSb, highlighting voltage-controlled magnetic anisotropy effects.
Findings
MAE of bulk CrSb is 1.2 meV per unit cell.
Thin films exhibit broken inversion symmetry and become ferrimagnetic.
Strain can switch the sign of MAE, enabling magnetic control.
Abstract
CrSb is a layered antiferromagnet (AFM) with perpendicular magnetic anisotropy, a high N\'{e}el temperature, and large spin-orbit coupling (SOC), which makes it interesting for AFM spintronic applications. To elucidate the various mechanisms of N\'{e}el vector control, the effects of strain, band filling, and electric field on the magnetic anisotropy energy (MAE) of bulk and thin-film CrSb are determined and analysed using density functional theory. The MAE of the bulk crystal is large (1.2 meV per unit cell). Due to the significant ionic nature of the Cr-Sb bond, finite slabs are strongly affected by end termination. Truncation of the bulk crystal to a thin film with one surface terminated with Cr and the other surface terminated with Sb breaks inversion symmetry, creates a large charge dipole and average electric field across the film, and breaks spin degeneracy, such that the thin…
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