Effect of interfacial oxidation layer in spin pumping experiments on Ni$_{80}$Fe$_{20}$/SrIrO$_3$ heterostructures

TL;DR

This study investigates how an interfacial oxide layer affects spin pumping and magnetic properties in NiFe/SrIrO3 heterostructures, revealing the presence of an antiferromagnetic layer that influences spin dynamics.

Contribution

It demonstrates the impact of interfacial oxidation on spin pumping in NiFe/SrIrO3, highlighting the role of an antiferromagnetic oxide layer through broadband ferromagnetic resonance measurements.

Findings

Interfacial oxide layer affects spin pumping efficiency.

Antiferromagnetic interfacial layer influences magnetization dynamics.

Differences observed between bilayer and trilayer samples at low temperatures.

Abstract

SrIrO$_3$ with its large spin-orbit coupling and low charge conductivity has emerged as a potential candidate for efficient spin-orbit torque magnetization control in spintronic devices. We here report on the influence of an interfacial oxide layer on spin pumping experiments in Ni$_{80}$Fe$_{20}$ (NiFe)/SrIrO$_3$ bilayer heterostructures. To investigate this scenario we have carried out broadband ferromagnetic resonance (BBFMR) measurements, which indicate the presence of an interfacial antiferromagnetic oxide layer. We performed in-plane BBFMR experiments at cryogenic temperatures, which allowed us to simultaneously study dynamic spin pumping properties (Gilbert damping) and static magnetic properties (such as the effective magnetization and magnetic anisotropy). The results for NiFe/SrIrO$_3$ bilayer thin films were analyzed and compared to those from a NiFe/NbN/SrIrO$_3$ trilayer reference sample, where a spin-transparent, ultra-thin NbN layer was inserted to prevent oxidation of NiFe. At low temperatures, we observe substantial differences in the magnetization dynamics parameters of these samples, which can be explained by an antiferromagnetic interfacial layer in the NiFe/SrIrO$_3$ bilayers.