CMOS compatible high-performance nanolasing based on perovskite-SiN hybrid integration

TL;DR

This paper demonstrates a hybrid perovskite-SiN nanolasing device on a silicon photonics platform, achieving high-performance coherent light emission with improved stability and efficiency, advancing integrated photonic applications.

Contribution

The work introduces a novel hybrid lasing device combining perovskite nanocrystals with silicon nitride cavities on a stable substrate, enhancing performance and integration capabilities.

Findings

Achieved low lasing threshold and narrow linewidths.

Enhanced Q-factor with PMMA encapsulation.

Demonstrated stable, high-performance coherent emission.

Abstract

Coherent light sources in silicon photonics are the long-sought holy grail because silicon-based materials have indirect bandgap. Traditional strategies for realizing such sources, e.g., heterogeneous photonic integration, strain engineering and nonlinear process, are technologically demanding. Here, we demonstrate a hybrid lasing device composing of perovskite nanocrystals and silicon nitride nanobeam cavity. We fabricate SiN photonic crystal naonobeam cavities on a solid substrate with significantly improved thermal and mechanical stabilities compared to conventional suspended ones. In addition, adding a PMMA-encapsulation layer on top of the SiN can significantly boost the Q-factor of the cavity mode. By dispersing perovskite nanocrystals as emitters in the PMMA layer, we obtained high-performance coherent emissions in terms of lasing threshold, linewidth and mode volumes. Our work offers a compelling way of creating solution-processed active integrated photonic devices based on the mature platform of silicon photonics for applications in optical information science and photonic quantum technology.