Supersaturation model for InN PA-MOCVD
Zaheer Ahmad, Mark Vernon, Garnett B. Cross, Daniel Deocampo,, Alexander Kozhanov
TL;DR
This paper presents a thermodynamic supersaturation model for plasma-assisted MOCVD of InN, linking growth parameters to film properties through supersaturation analysis.
Contribution
A novel thermodynamic supersaturation model for InN PA-MOCVD that correlates growth conditions with film structure and morphology.
Findings
InN films with the same supersaturation have similar structural properties.
Growth parameters influence supersaturation levels.
Supersaturation is a key factor in determining film quality.
Abstract
We developed a thermodynamic supersaturation model for plasma-assisted metalorganic chemical vapor deposition of InN. The model is based on the chemical combination of indium with plasma-generated atomic nitrogen ions. Indium supersaturation was analyzed for InN films grown by PA-MOCVD with varying input flow of indium precursor. Raman spectroscopy, X-ray diffraction, and atomic force microscopy provided feedback on structural properties and surface morphology of grown films. Growth parameter variation effect on In supersaturation was analyzed. InN films grown at varying growth parameters resulting in the same In supersaturation value exhibit similar structural properties and surface morphology.
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Taxonomy
TopicsGaN-based semiconductor devices and materials · ZnO doping and properties · Metal and Thin Film Mechanics