Analytical view on tunnable electrostatic quantum swap gate in tight-binding model

TL;DR

This paper presents an analytical and numerical study of a tunable electrostatic quantum swap gate using a tight-binding model of coupled quantum dots, highlighting entanglement formation and correlations relevant for scalable semiconductor quantum computing.

Contribution

It introduces a simplified tight-binding model for the electrostatic quantum swap gate, providing analytical insights into entanglement and correlation dynamics in single-electron quantum dot systems.

Findings

Analytical expressions for entanglement and correlations are derived.

The model demonstrates the impact of geometry on entanglement dynamics.

Results are relevant for cryogenic CMOS quantum technologies.

Abstract

Generalized electrostatic quantum swap gate implemented in the chain of 2 double coupled quantum dots using single electron in semiconductor is presented in tight-binding simplistic model specifying both analytic and numerical results. The anticorrelation principle coming from Coulomb electrostatic repulsion is exploited in single electron devices. The formation of quantum entanglement is specified and supported by analytical results. The difference between classical and quantum picture is given. The correlations between geometry of quantum structures and entanglement dynamics are shown in analytical way. Effective wavefunction of single electrons is extracted from 2 electron electrostatic interactions. The presented results have its significance in cryogenic CMOS quantum technologies that gives perspective of implementation of semiconductor quantum computer on massive scale. Keyword: electrostatic quantum swap gate, entanglement, anticorrelation, tight-binding model, two-body wavefunction, correlation-anticorrelation crossover, density matrix of 2 electron system, single electron devices, coupled quantum dots