Extremely large linear magnetoresistance in Antimony crystal
Mukesh Kumar Dasoundhi, Indu Rajput, Devendra Kumar, Archana Lakhani

TL;DR
This paper reports the discovery of extremely large, non-saturating linear magnetoresistance in Antimony crystals, with potential implications for magnetic sensor technology and understanding of charge transport in disordered systems.
Contribution
It demonstrates the classical origin of large linear MR in Antimony crystals, supported by experimental data and the Parish-Littlewood model, highlighting the role of disorder and mobility.
Findings
43000% MR at 2K at 9T
70% MR at room temperature at 9T
High charge carrier mobility (~3.8 x 10^4 cm^2/Vs)
Abstract
In this letter we report the observation of extremely large non-saturating linear magnetoresistance (MR) in Antimony(Sb) crystal. An extremely large magnetoresistance (XMR) of 43000% at 2K and large unsaturating MR70% at room temperature is observed at the magnetic field of 9T. Hall measurements reveal a very high mobility 3.8 x 10 cm/Vs of charge carriers and strong temperature dependence of carrier concentration and mobility. The respective scaling of MR and crossover field (B) from quadratic to linear MR with mobility and inverse of mobility describes the classical origin of large linear MR in this crystal as suggested by Parish and Littlewood (PL) model for disordered systems.
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