Schemes for Privacy Data Destruction in a NAND Flash Memory

TL;DR

This paper introduces new schemes for efficiently destroying privacy data in NAND flash memory, addressing residual data issues after deletion and proposing methods that are economical and easy to implement.

Contribution

The paper presents novel privacy data destruction schemes utilizing multi-level cell programming to improve efficiency and manageability over traditional erase methods.

Findings

Schemes effectively destroy residual privacy data in NAND flash.

Proposed methods are faster and more cost-effective than conventional erasure.

Applicable to various storage devices and data centers.

Abstract

We propose schemes for efficiently destroying privacy data in a NAND flash memory. Generally, even if privcy data is discarded from NAND flash memories, there is a high probability that the data will remain in an invalid block. This is a management problem that arises from the specificity of a program operation and an erase operation of NAND flash memories. When updating pages or performing a garbage collection, there is a problem that valid data remains in at least one unmapped memory block. Is it possible to apply the obligation to delete privacy data from existing NAND flash memory? This paper is the answer to this question. We propose a partial overwriting scheme, a SLC programming scheme, and a deletion duty pulse application scheme for invalid pages to effectively solve privacy data destruction issues due to the remaining data. Such privacy data destruction schemes basically utilize at least one state in which data can be written to the programmed cells based on a multi-level cell program operation. Our privacy data destruction schemes have advantages in terms of block management as compared with conventional erase schemes, and are very economical in terms of time and cost. The proposed privacy data destruction schemes can be easily applied to many storage devices and data centers using NAND flash memories.