Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

TL;DR

This paper presents a novel edge-homoepitaxial method for directly synthesizing high-quality InSe nanowires on SiO2/Si substrates, enabling high-performance photodetectors with exceptional photoresponsivity and speed.

Contribution

The study introduces a catalysis-free, edge-homoepitaxial growth technique for InSe nanowires on SiO2/Si, distinct from traditional methods, and demonstrates their application in high-performance photodetectors.

Findings

Achieved long, straight InSe nanowires via edge-homoepitaxial growth.

Demonstrated a photodetector with 271 A/W responsivity and 1.57×10^14 Jones detectivity.

Established a vapor-liquid-solid growth mechanism driven by selenium self-assembly.

Abstract

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it has been challenging to synthesize semiconducting nanowires directly on SiO2/Si substrate due to lattice mismatch. Here, we developed a catalysis-free approach to achieve direct synthesis of long and straight InSe nanowires on SiO2/Si substrate through edge-homoepitaxial growth. We further achieved parallel InSe nanowires on SiO2/Si substrate through controlling growth conditions. We attributed the underlying growth mechanism to selenium self-driven vapor-liquid-solid process, which is distinct from conventional metal-catalytic vapor-liquid-solid method widely used for growing Si and III-V nanowires. Furthermore, we demonstrated that the as-grown InSe nanowire-based visible light photodetector simultaneously possesses an extraordinary photoresponsivity of 271 A/W, ultrahigh detectivity of 1.57*10^14 Jones and a fast response speed of microsecond scale. The excellent performance of the photodetector indicates that as-grown InSe nanowires are promising in future optoelectronic applications. More importantly, the proposed edge-homoepitaxial approach may open up a novel avenue for direct synthesis of semiconducting nanowire arrays on SiO2/Si substrate.