Strain tunable pudding-mold-type band structure and thermoelectric properties of SnP$_3$ monolayer
Shasha Wei, Cong Wang, Guoying Gao

TL;DR
This study explores how biaxial strain influences the electronic and thermoelectric properties of SnP3 monolayer, revealing strain-tunable pudding-mold band structures and promising thermoelectric performance with low thermal conductivity.
Contribution
It provides first-principles insights into strain effects on SnP3 monolayer's band structure and thermoelectric properties, highlighting its potential for thermoelectric applications.
Findings
Biaxial strain modulates the energy gap and conductivity.
SnP3 monolayer exhibits pudding-mold-type valence band structure.
Low lattice thermal conductivity persists under tensile strain.
Abstract
Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising thermoelectric performance. Here, we investigate the biaxial strain effect on the electronic and thermoelectric properties of SnP3 monolayer. Our first-principles calculations combined with Boltzmann transport theory indicate that SnP3 monolayer has the pudding-mold-type valence band structure, giving rise to a large p-type Seebeck coefficient and a high p-type power factor. The compressive biaxial strain can decrease the energy gap and result in the metallicity. In contrast, the tensile biaxial strain increases the energy gap, and increases the n-type Seebeck coefficient and decreases the n-type electrical conductivity. Although the lattice thermal…
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