Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

TL;DR

This paper discusses the material requirements for developing a spin-orbit torque field-effect transistor (SOTFET), which combines memory and logic functionalities using magnetoelectric multiferroics, highlighting the importance of suitable material choices.

Contribution

It identifies and parametrizes the types of materials necessary for constructing SOTFET heterostructures, advancing the understanding of material selection for this device.

Findings

Identification of material classes suitable for SOTFETs

Parametrization of material properties critical for device performance

Guidelines for material selection in SOTFET development

Abstract

Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure.