All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

TL;DR

This paper demonstrates all-electrical control of an electron spin/valley qubit in SOI CMOS technology, highlighting a novel method for manipulating quantum bits with potential for scalable quantum computing.

Contribution

It introduces a fabrication process for quantum dot devices in standard SOI CMOS and shows electrical control of electron spins via inter-valley spin-orbit coupling.

Findings

Electrical control of electron spin achieved in SOI CMOS quantum dots

Modulating confinement geometry can switch qubit states

Process variability impacts operational bias range

Abstract

We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range.