Probing embedded topological modes in bulk-like GeTe-Sb$_2$Te$_3$ heterostructures
Hisao Nakamura, Johannes Hofmann, Nobuki Inoue, Sebastian Koelling,, Paul M. Koenraad, Gregor Mussler, Detlev Gr\"utzmacher, and Vijay Narayan

TL;DR
This study combines experimental and theoretical methods to investigate embedded topological states in GeTe-Sb$_2$Te$_3$ heterostructures, revealing their delocalization, robustness to disorder, and potential for manipulation in solid-solid interfaces.
Contribution
It provides a comprehensive analysis of embedded topological states at solid-solid interfaces, including experimental characterization and theoretical modeling, which was less explored before.
Findings
Embedded topological modes are delocalized over many lattice spacings.
ETSs are relatively robust to disorder.
Insights into manipulating topological modes in heterostructures.
Abstract
The interface between topological and normal insulators hosts metallic states that appear due to the change in band topology. While these topological states at a surface, i.e., a topological insulator-air/vacuum interface, have been studied intensely, topological states at a solid-solid interface have been less explored. Here we combine experiment and theory to study such \textit{embedded} topological states (ETSs) in heterostructures of GeTe (normal insulator) and SbTe (topological insulator). We analyse their dependence on the interface and their confinement characteristics. To characterise the heterostructures, we evaluate the GeTe-SbTe band offset using X-ray photoemission spectroscopy, and chart the elemental composition using atom probe tomography. We then use first-principles to independently calculate the band offset and also parametrise the band structure within…
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