Ultra-Low-Power Tuning in Hybrid Barium Titanate-Silicon Nitride Electro-Optic Devices on Silicon
J. Elliott Ortmann, Felix Eltes, Daniele Caimi, Norbert Meier,, Alexander A. Demkov, Lukas Czornomaz, Jean Fompeyrine, Stefan Abel

TL;DR
This paper presents a hybrid barium titanate-silicon nitride platform enabling ultra-low-power optical tuning via the Pockels effect, significantly reducing power consumption in integrated photonic devices for communications and sensing.
Contribution
The study introduces a novel hybrid BTO-SiN platform that achieves extremely low power tuning using ferroelectric BTO thin films and demonstrates its application in tunable optical filters.
Findings
Power consumption for tuning is only 106 nW/FSR.
Successfully compensates thermally induced refractive index variations.
Demonstrates tunable multiresonator optical filters.
Abstract
As the optical analogue to integrated electronics, integrated photonics has already found widespread use in data centers in the form of optical interconnects. As global network traffic continues its rapid expansion, the power consumption of such circuits becomes a critical consideration. Electrically tunable devices in photonic integrated circuits contribute significantly to the total power budget, as they traditionally rely on inherently power-consuming phenomena such as the plasma dispersion effect or the thermo-optic effect for operation. Here, we demonstrate ultra-low-power refractive index tuning in a hybrid barium titanate (BTO)-silicon nitride (SiN) platform integrated on silicon. We achieve tuning by exploiting the large electric field-driven Pockels effect in ferroelectric BTO thin films of sub-100 nm thickness. The extrapolated power consumption for tuning a free spectral…
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